边历峰，bwin必赢研究员，博导。2004年于中国科学院北京半导体研究所获得凝聚态物理专业理学博士学位；2004-2006年，在德国Paul-Drude固体电子学研究所从事博士后研究；2006-2021年，在中国科学院苏州纳米技术与纳米仿生研究所任职副研究员和研究员。主要研究方向包括新材料、新结构光电器件与自旋器件物理。主持国家重点研发计划、国家自然科学基金委面上项目、中德中心合作研究等项目10余项。在APL、JJAP、JCG、ACS Applied Nano Materials 等学术期刊论文50余篇，获授权中国发明专利10余项。

[1] HaibingQiu, XiangpengZhou, WenxianYang, XueZhang, ShanJin, ShulongLu, HuaQin, and LifengBian*, Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN, Appl.Phys.Lett.119,062108(2021);doi:10.1063/5.0061872

[2] Zhiwei Xing, Wenxian Yang, Yukun Zhao, Junhua Long, Xuefei Li, Pan Dai, Junqi Lai, Qi Chen, Lifeng Bian*, Shiro Uchida and Shulong Lu, Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy, Japanese Journal of Applied Physics,(2020)59 Vol11, 115502

[3] Yukun Zhao, Zhiwei Xing, Lutz Geelhaar, Jianya Zhang, Wenxian Yang, Thomas Auzelle, Yuanyuan Wu, Lifeng Bian*, and Shulong Lu，Detaching (In,Ga)N Nanowire Films for Devices Requiring High Flexibility and Transmittance，ACS Applied Nano Materials (2020)，3 (10), 9943-9950

[4] Min Zhou, Haibing Qiu, Tao He, Jianya Zhang, Wenxian Yang, Shulong Lu, Lifeng Bian,* and Yukun Zhao*，UV Photodetector Based on Vertical (Al, Ga)N Nanowires with Graphene Electrode and Si Substrate，Phys. Status Solidi A（2020），2000061

[5] Shan Jin, Xuefei Li, Wenxian Yang, Yukun Zhao, Lifeng Bian*, Shulong Lu，Electrical and Optical Properties of Beryllium Deep Acceptors in GaN，JOURNAL OF ELECTRONIC MATERIALS（2020）, https://doi.org/10.1007/s11664-020-08472-5