2021年1月至今，bwin必赢博士后。

2016年9月-2020年1月，bwin必赢，微电子学与固体电子学，理学博士，导师：曾晓洋。

2013年9月-2016年6月，宁波大学，电路与系统，工学硕士，导师：汪鹏君。

2009年9月-2013年6月，华南理工大学，光信息科学与技术，理学学士。

研究内容：主要从事基于忆阻器的神经网络存算一体工作，在神经网络低开销硬件电路，可靠性优化算法，和系统架构实现上均展开了相应的研究工作，旨在设计面向实际应用的高性能人工智能芯片。主持了国家自然科学青年基金和中国博士后科学基金面上资助。当前发表了18篇论文，近年来以第一作者在国际著名期刊会议JSSC、ASSCC、JETCAS、TCAS II上发表了ReRAM领域的文章，以第二作者身份获授权专利6项。

代表论著：

1. Keji Zhou^#, Xiaoyong Xue^#*, Jianguo Yang, Xiaoxin Xu, Hangbing Lv^*, Minge Jing, Jing Li, Xiaoyang Zeng^*, Ming Liu, “High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications”, IEEE Journal of Solid-State Circuits, 2021, 56(3): 988-1000.

2. Keji Zhou^#, Xiaoyong Xue^#*, Jianguo Yang, Xiaoxin Xu, Hangbing Lv^*, Mingyu Wang, Minge Jing, Wenjun Liu, Xiaoyang Zeng^*, Steve S Chung, Jing Li, Ming Liu, “Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power Reduction”, IEEE Asian Solid-State Circuits Conference (A-SSCC), Tainan, Taiwan, 2018-11-5 ~ 2018-11-7.

3. Keji Zhou, Xinru Jia, Chenyang Zhao, Xumeng Zhang, Guangjian Wu, Chen Mu, Haozhe Zhu, Yanting Ding, Chixiao Chen, Xiaoyong Xue, Xiaoyang Zeng, Qi Liu^*, “A 28nm 81Kb 59-95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator with Voltage-to-Time-to-Digital based Output”, IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2022.

4. Keji Zhou, Chenyang Zhao, Jinbei Fang, Jinwen Jiang, Deyang Chen, Yujie Huang, Minge Jing, Jun Han, Haidong Tian, Xiankui Xiong, Qi Liu, Xiaoyong Xue^*, Xiaoyang Zeng, “An Energy Efficient Computing-in-Memory Accelerator with 1T2R Cell and Fully Analog Processing for Edge AI Applications”, IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68(8): 2932-2936.

5. Keji Zhou, Chen Mu, Bo Wen, Xumeng Zhang, Guangjian Wu, Can Li, Hao Jiang, Xiaoyong Xue, Shang Tang, Chixiao Chen^*, Qi Liu^*, “The Trend of Emerging Non-Volatile TCAM for Parallel Search and AI Applications”, Chip, 2022: 100012.

6. Keji Zhou, Ruijun Lin, Zhiwang Guo, Yixuan Liu, Jingwen Jiang, Chenyang Zhao, Jinbei Fang, Xiaoxin Xu, Xiaoyong Xue^*, Xiaoyang Zeng, “A 2D2R ReRAM CIM accelerator for multilayer perceptron in visual classification applications”, Microelectronics Journal, 2022: 105478.

7. Zhao, Dongyan, Yubo Wang, Jin Shao, Yanning Chen, Zhiwang Guo^*, Cheng Pan, Guangzhi Dong, Min Zhou, Fengxia Wu, Wenhe Wang, Keji Zhou^*, and Xiaoyong Xue. 2022, “Compute-in-Memory for Numerical Computations”, Micromachines, 2022, 13(5): 731.

专利申请

1.Pengjun Wang, Keji Zhou, Yuejun Zhang, Huihong Zhang, STATIC MEMORY CELL CAPABLE OF BALANCING BIT LINE LEAKAGE CURRENTS，美国，授权号：US10410687B2.

2.Pengjun Wang, Keji Zhou, Huihong Zhang, Daohui Gong, REPLICA BIT-LINE CONTROL CIRCUIT，美国，授权号：US9886206B1.

3.Pengjun Wang, Keji Zhou, Weiwei Chen, Yuejun Zhang, STATIC RAM FOR DIFFERENTIAL POWER ANALYSIS RESISTANCE，美国，授权号：US9886999B2.

4.汪鹏君，周可基，陈伟伟，张跃军。一种防御差分功耗分析的静态随机存储器，中国，授权号：CN105761748B。

5.汪鹏君，周可基，陈伟伟，张跃军。一种静态随机存储器的输出电路，中国，授权号：CN105632550B。

6.汪鹏君，周可基，张会红，龚道辉。一种复制位线控制电路，中国，授权号：CN106205678B。