科研工作经历:
2020.12至今:青年研究员,博士生导师,bwin必赢
2016.07至2020.12:博士后,新加坡国立大学物理系
2015.11至2016.07:资深流程整合工程师,新加坡联华电子公司(UMC)
教育经历:
2012.08至2015.11:博士,新加坡国立大学物理系(获国家优秀自费留学生奖学金)
2008.08至2012.06:学士,兰州大学物理学基地班(获甘肃省高等学校三好学生、国家奖学金、中国科学院物理研究所共建“创新性人才联合培养基地”奖学金、兰州大学优秀学生一等奖学金等)
研究兴趣与领域:
1. 二维晶体管、逻辑存储、神经形态、自旋量子器件
2. 二维材料/异质结合成与生长
研究成果:
国家海外优青、上海海外高层次和bwin必赢新工科人才计划入选者。近年来以第一(含共同第一)或共同通讯作者论文20余篇(均篇影响因子接近13),多见于国际一流期刊,包括Nat. Nanotechnol. 1篇、Nat. Electron. 2篇、Nat. Commun. 2篇、Adv. Mater. 1篇、Nano Lett. 1篇、ACS Nano 1篇、Adv. Sci. 2篇、Small 1篇、Adv. Opt. Mater. 3篇等,研究成果获得Nature Flatchat blog、Phys.org、nanowerk等多家科研媒体的评述。主持国家自然科学基金委、上海市科委等多项科研项目。长期担任Nat. Electron.、Nat. Commun.、Adv. Funct. Mater.、Adv. Opt. Mater.、ACS Appl. Mater. Interfaces、Nanoscale等多个SCI期刊的审稿人。
1.D. Xiang, T. Liu, “Monolayer transistors at wafer scales”, Nature Electronics, 4, 868 (2021)
2.D. Xiang, T. Liu, W. Chen, “Fused computing and storage in a 2D transistor”, Nature Nanotechnology, 14, 642 (2019)
3.H. K. Ng#, D. Xiang#, A. Suwardi#, G. Hu, K. Yang, Y. Zhao, T. Liu, Z. Cao, H. Liu, S. Li, J. Cao, Q. Zhu, Z. Dong, C. Tan, D. Chi, C. Qiu, K. Hippalgaonkar, G. Eda, M. Yang, J. Wu, “Improving carrier mobility in two-dimensional semiconductors with rippled materials”, Nature Electronics (2022)
4.D. Xiang, T. Liu, Q. Xu, J. Y. Tan, Z. Hu, B. Lei, Y. Zheng, A. H. Castro Neto, L. Liu, W. Chen, “Two Dimensional Multi-bit Optoelectronic Memory with Broadband Spectrum Distinction”, Nature Communications, 9, 2966 (2018)
5.D. Xiang, C. Han, J. Wu, S. Zhong, YY. Liu, JD. Lin, XA. Zhang, WP. Hu, B.Özyilmaz, A. H. Castro Neto, ATS. Wee, W. Chen, “Surface Transfer Electron and Hole Doping Induced Effective Modulation on Ambipolar Characterisctics of Few-Layer Black Phosphorus”, Nature Communications, 6, 6485 (2015)
6.D. Xiang, T. Liu, XM Zhang, P. Zhou, W. Chen, “Dielectric engineered two-dimensional neuromorphic transistors”, Nano Letters, 21 (8), 3557-3565 (2021)
7.T. Liu#, D. Xiang#*, Y. Zheng, Y. Wang, L. Wang, J. He, L. Liu, W. Chen*, “Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-free Complementary Electronic Devices”, Advanced Materials, 30, 1804470 (2018)
8.T. Liu, C. Han, D. Xiang*, K. Han, A. Ariando, W. Chen*, “Optically controllable 2D material/complex oxide heterointerface”, Advanced Science, 7 (21), 2002393 (2020)
9.T. Liu#, D. Xiang#, H. K. Ng#, Z. Han, K. Hippalgaonkar, A. Suwardi, J. Martin, S. Garaj, J. Wu, “Modulation of Spin Dynamics in 2D Transition‐Metal Dichalcogenide via Strain‐Driven Symmetry Breaking”, Advanced Science, 2200816(2022)
10.Wei T,, Han Z., Zhong X., Xiao Q., Liu T.*, Xiang D.*, “Two Dimensional Semiconducting Materials for Ultra-scaled Transistors”, iScience, 25 (10), 105160 (2022)
11.Li C., Zhang X.*, Chen P., Zhou K., Yu J., Wu G., Xiang D.*, Jiang H., Wang M., Liu Q.*, “Short-term synaptic plasticity in emerging devices for neuromorphic computing”, iScience, 26 (4), 106315 (2022)
12.D. Xiang,C. Han, YY. Liu, JD. Lin, W. Chen, “Surface Transfer Doping Induced High Performance Graphene/Silicon Schottky Junction Based Self-Powered Photodetector”, Small, 11 (37), 4829 (2015)
13.D. Xiang, T. Liu, J. Wang, P. Wang, L. Wang, Y. Zheng, Y. Wang, J. Gao, KW. Ang. G. Eda, W. Hu, L. Liu, W. Chen*, “Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disufide Transistor”, Advanced Optical Materials, 7, 1901115 (2019)
14.Y. Zheng, D. Xiang*, JL. Zhang, R. Guo, W. Wang, T. Liu, L. Loh, Y. Wang, J. Gao, C. Han, M. Bosman, Z. Ni, W. Chen*, “Controlling phase transition in WSe2 towards ideal n-type transistor”, Nano Research, 14, 2703–2710 (2021)
15.Y. Wang, D. Xiang*, Y. Zheng, T. Liu, X. Ye, J. Gao, H. Yang, C. Han, W. Chen*, “Van der Waals Heterostructure with Tunable Behavior Enabled by MoO3 Surface Functionalization”, Advanced Optical Materials, 8, 1901867 (2020)
16.Z. Han, T. Wei, Q. Xiao, X. Zhong, D. Xiang*, T. Liu*, “Fabrication of patternable Janus transition-metal dichalcogenides assisted by electron beam irradiation” Applied Physics Letter,120, 221901 (2022)
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